| 低缺陷3英寸中波InAs/InAs1-xSbx材料分子束外延工艺研究 |
| 投稿时间：2024-07-22 修订日期：2024-08-15 点此下载全文 |
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| 中文摘要:为实现中波nBn型高温工作探测器在150 K条件下对于4.8 μm波长的探测,提升大面阵探测器的性能、产量和材料质量,在分子束外延(Molecular Beam Epitaxy,MBE)nBn型InAsSb体材料的工艺基础上,对3inch DA(Digital Alloy)-nBn型InAs/InAs1-xSbxⅡ类超晶格材料进行分子束外延工艺研究。研究了材料源的束流大小和外延材料的生长温度对晶格质量的影响。使用光学显微镜、光学轮廓仪、原子力显微镜(Atomic Force Microscopy,AFM)、高分辨X射线衍射仪(X-Ray Diffractometer,HRXRD)分别对材料的晶格质量、结构和组分进行了表征,使用光致发光(Photoluminescence Spectroscopy,PL)光谱仪对材料的荧光发光波长进行变温测试。测试结果显示,优化后的外延材料表面缺陷大小在3 μm直径以上的密度为64 cm-2,材料总厚度偏差为8.16 μm,材料相对于基准面的粗糙度均方根数值Rq为0.339 nm,材料整体平整均匀。XRD测试结果显示材料-1级衍射卫星峰的半高宽为16 arcsec,证明所生长的超晶格材料具有较好的晶格质量。PL谱结果显示材料在75K条件下发光峰位于4.69 μm处,且随着温度的升高,材料的探测波长发生红移。高质量3英寸InAs/InAs1-xSbxⅡ类超晶格材料的制备为实现大面阵、高工作温度的DA-nBn型红外探测器奠定了基础。 |
| 中文关键词:分子束外延 DA-nBn 3inch GaSb衬底 |
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| Research on Molecular Beam Epitaxy Technology of Low Defect 3-inch Mid-Wave InAs/InAs1-xSbx Materials |
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| Abstract:In order to realize the detection of 4.8 μm wavelength under 150 K condition of medium wave nBn high temperature working detector, the performance, output and material quality of the large array detector have been improved on Molecular-Beam-Epitaxy(MBE), on the basis of MBE nBn type InAsSb material, 3 inch DA(Digital Alloy)-nBn type InAs/ InAs1-xSbx superlattice materials were studied. The effects of the beam size of the material source and the growth temperature of the epitaxy material on the quality of the crystal lattice were studied. Using optical Microscopy, optical profilometer, Atomic Force Microscopy(AFM), high resolution X-Ray Diffractometer(HRXRD) were used to characterize the crystal lattice mass, structure and composition of the materials, and Photoluminescence(PL) Spectroscopy was used to measure the fluorescence emission wavelength of the materials. The test results show that the density of defects above 3 μm of the optimized epitaxial material surface is 64 cm-2, the total thickness deviation of the root-mean-suqare value Rq is 0.34 nm, and the material as a whole is flat and uniform. XRD results show that the half-height and width of the first-order diffraction satellite peak of the material in 16 arcsec, which proves that the growth superlattice material has a good lattice quality. PL spectrum results show that the luminescence peak of the material is 4.69 μm at 75 K, and the detection wavelength of the material redshifts with the increase of temperature. The preparation of high-quality 3 inch InAs/ InAs1-xSbx type-Ⅱ superlattice materials lays a foundation for the realization of DA-nBn type infrared detectors with large array and high operating temperature. |
| keywords:molecular beam epitaxy, DA-nBn, 3 inch GaSb substrate |
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