简易化学水浴法制备SnO2/p-Si异质结光电性能
作者:
作者单位:

东华大学 应用物理系,华东理工大学 超细材料制备与应用教育部重点实验室,上海大学分析测试中心,东华大学 应用物理系,上海大学物理系,东华大学 应用物理系,上海微伏仪器科技有限公司

作者简介:

通讯作者:

中图分类号:

基金项目:

上海市联盟计划项目(LM201601),超细材料制备与应用教育部重点实验室( 华东理工大学) 开放课题基金(15Q10932),中央高校基本科研业务费(东华大学,16D110916)


Optoelectronic properties of SnO2/p-Si heterojunction prepared by a simple chemical bath deposition method
Author:
Affiliation:

Department of Applied Physics,Donghua University, Renmin Rd North,Songjiang District,Shanghai,(2. The Key Laboratory for Ultrafine Materials of The Ministry of Education, East China University of Science and Technology,Instrumental Analysis and Research Center,Shanghai University,Department of Applied Physics,Donghua University, Renmin Rd North,Songjiang District,Shanghai,Department of Physics, Shanghai University,Department of Applied Physics,Donghua University, Renmin Rd North,Songjiang District,Shanghai,Shanghai Weifu Instrument Technology Company Limited

Fund Project:

  • 摘要
  • |
  • 图/表
  • |
  • 访问统计
  • |
  • 参考文献
  • |
  • 相似文献
  • |
  • 引证文献
  • |
  • 资源附件
  • |
  • 文章评论
    摘要:

    通过一种简易化学水浴法将SnO2薄膜沉积在晶硅衬底上以制备n-SnO2/p-Si异质结光电器件, 这种自制的化学水浴装置非常便宜和方便.采用XRD、SEM、XPS、PL、紫外-可见光分光光度计和霍尔效应测试系统表征了SnO2薄膜的微结构、光学和电学性能, 对SnO2/p-Si异质结的I-V曲线进行测试并分析, 获得明显的光电转换特性.

    Abstract:

    The SnO2 film was successfully deposited on Si wafer by a simple chemical bath method to fabricate n-SnO2/p-Si heterojunction structure photoelectric device. The self-made chemical bath system is very cheap and convenient. The structural, optical and electrical properies of the SnO2 film were studied by XRD, SEM, XPS, PL, UV-VIS spectrophotometer and Hall effect measurement. The current-voltage (I-V) curve of SnO2/p-Si heterojunction device was tested and analyzed in detail. SnO2/p-Si heterojunction shows a prominent visible-light-driven photoelectrical performance under the low intensity light irradiation. Great photoelectric behavior was also obtained.

    参考文献
    相似文献
    引证文献
引用本文

何波,徐静,宁欢颇,赵磊,邢怀中,张建成,秦玉明,张磊.简易化学水浴法制备SnO2/p-Si异质结光电性能[J].红外与毫米波学报,2017,36(2):139~143]. HE Bo, XU Jing, NING Huan-Po, ZHAO Lei, XING Huai-Zhong, ZHANG Jian-Chen, QIN Yu-Ming, ZHANG Lei. Optoelectronic properties of SnO2/p-Si heterojunction prepared by a simple chemical bath deposition method[J]. J. Infrared Millim. Waves,2017,36(2):139~143.]

复制
分享
文章指标
  • 点击次数:
  • 下载次数:
  • HTML阅读次数:
  • 引用次数:
历史
  • 收稿日期:2016-07-15
  • 最后修改日期:2016-10-29
  • 录用日期:2016-11-04
  • 在线发布日期: 2017-04-28
  • 出版日期:
文章二维码