980 nm大功率高阶光栅锥形半导体激光器
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作者单位:

1.中国科学院长春光学精密机械与物理研究所 发光学及应用国家重点实验室,吉林 长春 130033;2.中国科学院大学 大珩学院,北京 100049

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中图分类号:

TN3

基金项目:

国家重点基础研究发展计划(2018YFB0504600, 2017YFB0405100),国家自然科学基金(61904179, 62004194),吉林省科技发展计划项目(20200401062GX)


980 nm high-power tapered semiconductor laser with high order gratings
Author:
Affiliation:

1.State Key Laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;2.Daheng College, University of Chinese Academy of Sciences, Beijing 100049, China

Fund Project:

Supported by the National Science and Technology Major Project of China (2018YFB0504600, 2017YFB0405102), National Natural Science Foundation of China (61904179, 62004194), Science and Technology Development Project of Jilin Province (20200401062GX)

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    摘要:

    为了获得高功率、窄线宽和近衍射极限输出的半导体激光器,采用高阶光栅(high order Bragg gratings,HOBGs)和主控振荡功率放大器(Master Oscillator Power-Amplifier,MOPA)结构,成功研制出一种980 nm波段的HOBGs-MOPA半导体激光器。该激光器采用周期为11.37 μm的高阶光栅进行光模式选择,通过锥角为6°的锥形波导将单模激光功率放大,实现了输出功率2.8 W,3 dB光谱线宽31 pm,光束质量因子M 2为2.51的窄线宽激光输出。

    Abstract:

    In order to obtain high power, narrow line width and near diffraction limit output semiconductor laser diodes, the high order Bragg gratings (HOBGs) and master oscillator power-amplifier (MOPA) have been fabricated in the waveguide of HOBGs-MOPA laser diodes with an emission wavelength of 980 nm. The longitudinal mode of HOBGs-MOPA was selected by the HOBGs with a period of 11.37 μm. The single-mode optical power is amplified by a tapered waveguide with an angle of 6°. In this paper, we present a single mode laser diode with continuous wave power 2.8 W at a 3 dB line-width of 31 pm. The laser diode operates in a close to diffraction-limited optical mode (M 2=2.51, laterally).

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郎兴凯,贾鹏,秦莉,陈泳屹,梁磊,雷宇鑫,宋悦,邱橙,王玉冰,宁永强,王立军.980 nm大功率高阶光栅锥形半导体激光器[J].红外与毫米波学报,2021,40(6):721~724]. LANG Xing-Kai, JIA Peng, QIN Li, CHEN Yong-Yi, LIANG Lei, LEI Yu-Xin, SONG Yue, QIU Cheng, WANG Yu-Bing, NING Yong-Qiang, WANG Li-Jun.980 nm high-power tapered semiconductor laser with high order gratings[J]. J. Infrared Millim. Waves,2021,40(6):721~724.]

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  • 收稿日期:2021-02-07
  • 最后修改日期:2021-12-15
  • 录用日期:2021-03-16
  • 在线发布日期: 2021-11-29
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